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2008
Yang, B, Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., de Sou, "High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor", IEEE International Electron Device Meeting, 12/2008. Tagged XML BibTex
Z. Ren, G. Pei, J. Li, F. Yang, R. Takalkar, K. Chan, G. Xia, Z. Zhu, A. Madan, T. Pinto, T.Adam, J. Miller, A. Dube, L. Black, J. W. Weijtmans, B. Yang, E. Harley, A. Chakravarti, T.Kanarsky, I. Lauer, D.-G. Park, D. Sadana, and G. Shahidi, "PDSOI nMOSFETs with Embedded Phosphorus-doped SiC Stressors for CMOS Technology", IEEE Symp. on VLSI Tech. 2008, 07/2008. Tagged XML BibTex