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Transistor Vertical Cavity Surface Emitting Laser (TX-VCSEL)

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Seminar Details
Presenter Name: 
Wei Shi
Faculty Supervisor(s): 
Lukas.Chrostowski
Date: 
Tuesday, August 12, 2008 - 2:00pm
Location: 
Kaiser 2020
Seminar Abstract: 

By integrating the Heterojunction Bipolar Transistor (HBT) structure into a Vertical Cavity Laser (VCSEL) structure, we can combine the advantages of the VCSEL with the optoelectronic properties of the transistor laser. In this paper, we describe the structure of a Transistor VCSEL (TX-VCSEL) and present the numerical modeling results using Crosslight PICS3D. Optical saturation, as a function of the base current, due to the three-port operation is observed. Based on this optical saturation mechanism, voltage control of the TX-VCSEL is proposed.

The devices are being fabricated in the AMPEL Nanofabrication facility.

Presenter Biography: