By integrating the Heterojunction Bipolar Transistor (HBT) structure into a Vertical Cavity Laser (VCSEL) structure, we can combine the advantages of the VCSEL with the optoelectronic properties of the transistor laser. In this paper, we describe the structure of a Transistor VCSEL (TX-VCSEL) and present the numerical modeling results using Crosslight PICS3D. Optical saturation, as a function of the base current, due to the three-port operation is observed. Based on this optical saturation mechanism, voltage control of the TX-VCSEL is proposed.
The devices are being fabricated in the AMPEL Nanofabrication facility.