Stress engineering and SiGe are receiving more and more attention in semiconductor R&D. They have much enhanced carrier transport properties than traditional Si, and the capability of bandgap engineering. At the same time, they are significantly more economical for large scale production compared to III-V semiconductors. However, strained Si/SiGe systems are not as robust as traditional single crystalline Si during processing. This talk discusses the research progress on the process physics of strained Si/SiGe systems, including the impact of implant, anneal, and Si-Ge interdiffusion behavior and carrier transport in strained Si. This talk will also reveal opportunities in the research of electronic and optoelectronic devices, such as CMOS, Ge photodiode.