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Ultra-low power 90nm 6T SRAM cell for wireless sensor network applications

Publication Type:

Conference Paper


2006 IEEE International Symposium on Circuits and Systems (IEEE Cat. No. 06CH37717C), IEEE, Island of Kos, Greece, p.4 pp. (2006)


integrated circuit design; low-power electronics; SRAM chips; wireless sensor networks


This paper presents a comparative study of leakage reduction techniques applied to a 90 nm 6T SRAM to find an optimal design for ultra-low power wireless sensor applications. A 4-Kb SRAM implemented with the proposed techniques has a leakage as low as 26.5 nA in the idle mode, a 189? improvement over a memory without applying such techniques