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Towards a compact model for Schottky-barrier nanotube FETs

Publication Type:

Conference Paper

Source:

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), Sydney, NSW, Australia, p.303 - 6 (2002)

URL:

http://dx.doi.org/10.1109/COMMAD.2002.1237251

Keywords:

ballistic transport;carbon nanotubes;Laplace equations;nanotube devices;Poisson equation;Schottky barriers;Schottky gate field effect transistors;tunnelling;

Abstract:

Issues pertinent to the development of a compact model for predicting the drain current-voltage characteristics of coaxial-geometry, Schottky-barrier, carbon-nanotube field-effect transistors are discussed. Information on the non-equilibrium barrier shapes at the source-tube and drain-tube contacts is inferred from exact 2-D solutions to Poisson's equation at equilibrium and Laplace's equation. This information is then used in a non-equilibrium flux approach to create a model that accounts for tunneling through both barriers and computes the drain current in the case of ballistic transport. For (16,0) tubes and a gate/tube-radius ratio of 10, saturation drain currents of about 1 μm are predicted

Notes:

compact model;Schottky-barrier nanotube FETs;drain current-voltage characteristics;coaxial-geometry;Schottky-barrier;carbon-nanotube field-effect transistors;nonequilibrium barrier shapes;source-tube;2D solutions;Poisson equation;Laplace equation;nonequilibrium flux approach;tunneling;ballistic transport;1 muA;