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Thermal stressing of bipolar transistors with metal-insulator-semiconductor heterojunction emitters

Publication Type:

Journal Article

Source:

Appl. Phys. Lett. (USA), Volume 52, Number 20, p.1664 - 6 (1988)

URL:

http://dx.doi.org/10.1063/1.99051

Keywords:

bipolar transistors;metal-insulator-semiconductor devices;

Abstract:

Silicon bipolar junction transistors employing metal-thin insulator-semiconductor tunnel junction emitters are capable of realizing extremely high common-emitter current gains. The experimental evidence presented here indicates a possible limitation of these devices as regards their inability to withstand moderate temperature stressing

Notes:

thermal stressing;bipolar transistors;metal-insulator-semiconductor heterojunction emitters;common-emitter current gains;