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Switching-speed calculations for Schottky-barrier carbon nanotube field-effect transistors

Publication Type:

Conference Paper

Source:

J. Vac. Sci. Technol. A, Vac. Surf. Films (USA), Volume 24, Number 3, Canada, p.708 - 12 (2006)

URL:

http://dx.doi.org/10.1116/1.2194932

Keywords:

capacitance;carbon nanotubes;field effect transistor switches;leakage currents;Schottky barriers;

Abstract:

The switching times and on/off-current ratios are computed for Schottky-barrier carbon nanotube field-effect transistors with different tube diameters and insulator thicknesses. It is indicated that it may be difficult to obtain a device exhibiting both high speed and low leakage current. A small-diameter nanotube with a thin insulator may offer the best compromise. It is also demonstrated that interelectrode capacitances can be large, thereby calling into question the usefulness of the intrinsic switching time as a figure of merit for transistors intended for digital-logic applications. The extrinsic switching time is a more appropriate metric and it is shown here that considerable optimization of the carbon nanotube field-effect transistor will be required to achieve figures better than for modern Si complementary metal-oxide-semiconductor transistors over a reasonable range of on/off-current ratio

Notes:

switching-speed calculations;Schottky-barrier carbon nanotube;field-effect transistors;on/off-current ratios;tube diameters;insulator thickness;low leakage current device;high speed device;interelectrode capacitances;intrinsic switching time;digital-logic application;carbon nanotube field-effect transistor;complementary metal-oxide semiconductor transistors;C;