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Study the effect of distribution of density of states on the depletion width of organic Schottky contacts

Publication Type:

Journal Article

Source:

Solid-State Electronics, p.5 (2008)

URL:

http://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6TY5-4T3KTG2-2&_user=10&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c&_acct=C000050221&_version=1&_urlVersion=0&_userid=10&md5=ee7908acfb30dd51341617cda984a4d2

Keywords:

Organic Schottky junction; Density of states (DOS); Full depletion approximation; Regioregular-poly 3 hexylthiophene (rr-P3HT)

Abstract:

Organic semiconductor to metal Schottky contacts have been widely used in electronic devices and to investigate the properties of organic semiconductors. In designing and characterizing these devices the full depletion approximation is used. The analytical and numerical simulations presented in this paper suggest that this approximation is not generally valid. Simulations of a Schottky contact between regioregular-poly 3 hexylthiophene (rr-P3HT) and aluminum show that this approximation becomes worse as molecular order decreases, with the potential profile increasingly deviating from the expected quadratic function of position. Also the depletion width decreasing well below that predicted using the approximation. In this work the slope of the band tail is used as a measure of disorder.

Faculty Member(s): 
John.Madden
Research Area(s): 
Electronics