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Stability of a micromechanical pull-in voltage reference

Publication Type:

Journal Article


(IEEE) Transactions on Instrumentation and Measurement, Volume 52, Number 3, p.457-460 (2003)



Young's modulus circuit stability integrated circuit design measurement uncertainty micromechanical devices reference circuits thermal expansion 100 micron 11 micron 3 micron 9.1 V Young's modulus measurement uncertainty microbeams micromechanical p


The reproducibility over temperature and time of the pull-in voltage
of micromechanical structures has been analyzed and verified using
fabricated devices in silicon. The pull-in structures are intended
for use as an on-chip voltage reference. Microbeams of 100-/spl mu/m
length, 3-/spl mu/m width, and 11-/spl mu/m thickness are electrostatically
actuated with a very reproducible pull-in voltage at 9.1 V. Devices
demonstrated an initial drift of -12 mV over 10 days and stabilized
within the 500-/spl mu/V measurement uncertainty. The measured temperature
coefficient of -1 mV/K is in good agreement with the analysis and
is due to the combined effect of thermal expansion and the temperature
dependence of the Young's modulus in silicon.