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Si-Ge Interdiffusion under Oxidizing Conditions in Epitaxial SiGe Heterostructures with High Compressive Stress

Publication Type:

Journal Article

Source:

APPLIED PHYSICS LETTERS, Volume 96, p.122107 (2010)

Abstract:

Si–Ge interdiffusion under oxidizing and inert conditions has been studied in epitaxial relaxed
Si1−xGex/compressive Si1−yGey/relaxed Si1−xGex heterostructures. The interdiffusion was measured
by secondary ion mass spectroscopy (SIMS) and studied using simulations. Within the SIMS
accuracy, the measured Ge profiles show that oxidation has a small effect, if any, on the Si–Ge
interdiffusion of these structures. These results suggest that oxidation does not accelerate Si–Ge
interdiffusion significantly, which lessens process integration constraints for SiGe devices such as
high mobility dual channel metal oxide semiconductor field effect transistors and heterostructure
tunneling field effect transistors.

Faculty Member(s): 
Guangrui.Xia