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A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions

Publication Type:

Conference Paper

Source:

Material Research Society (MRS) 2000 Spring Meeting, Symposium A: Amorphous and Heterogeneous Silicon Thin Films, Volume 609, San Francisco, California, p.A28.3 (2000)