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A non-adulterating method for the measurement of minority carrier diffusion length in silicon

Publication Type:

Conference Paper

Source:

Conference Record of the Sixteenth IEEE Photovoltaic Specialists Conference - 1982, San Diego, CA, USA, p.1249 - 51 (1982)

Keywords:

carrier lifetime;elemental semiconductors;minority carriers;silicon;

Abstract:

A new method of measuring the minority carrier diffusion length in bulk silicon has been developed. The method uses basewidth-modulation in bipolar transistor structures which are simply formed by employing induced, rather than diffused, junctions. The induced junctions are created by positive barrier MIS contacts, and this is the major new feature

Notes:

nonadulterating method;Si;elemental semiconductor;minority carrier diffusion length measurement;basewidth-modulation;bipolar transistor structures;positive barrier MIS contacts;