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Noise in integrated optical receiver front-ends employing InP/InGaAs HBTs

Publication Type:

Conference Paper

Source:

[1993] Conference Proceedings Fifth International Conference on Indium Phosphide and Related Materials, Paris, France, p.417 - 19 (1993)

URL:

http://dx.doi.org/10.1109/ICIPRM.1993.380595

Keywords:

bipolar integrated circuits;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;indium compounds;integrated circuit noise;integrated optoelectronics;optical receivers;

Abstract:

The authors present calculations of the equivalent input noise current spectral density in both tuned and untuned front-ends employing InP/InGaAs heterostructure bipolar transistors (HBTs) and identify the dominant transistor-related components of the noise. The receiver sensitivity will depend ultimately on the front-end noise. Results are presented for receivers based on InP/InGaAs HBTs as used in either 1 GB/s or 10 GB/s demonstration units. The small-signal parameters for these transistors are shown

Notes:

semiconductor;integrated optical receiver front-ends;InP/InGaAs HBTs;input noise current spectral density;heterostructure bipolar transistors;receiver sensitivity;small-signal parameters;1 GB/s;10 GB/s;InP-InGaAs;