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A new method for estimating the electron concentration in the 2-dimensional electron gas in MODFETs

Publication Type:

Journal Article

Source:

Solid-State Electron. (UK), Volume 35, Number 12, p.1779 - 82 (1992)

URL:

http://dx.doi.org/10.1016/0038-1101(92)90260-J

Keywords:

carrier density;high electron mobility transistors;semiconductor device models;two-dimensional electron gas;WKB calculations;

Abstract:

By employing the WKB approximation to solve Schrodinger's equation and invoking a modified density of states function which allows a classical solution of Poisson's equation, a computationally efficient method for obtaining the bound-state electron concentration in the two-dimensional electron gas in MODFETs has been developed. The method gives results which agree very closely with those from the full, self-consistent, quantum-mechanical calculation

Notes:

model;Schrodinger equation;Poisson equation;electron concentration;WKB approximation;density of states function;two-dimensional electron gas;MODFETs;AlGaAs-GaAs heterojunction region;