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A model for Schottky-barrier solar cell analysis

Publication Type:

Journal Article

Source:

J. Appl. Phys. (USA), Volume 47, Number 5, p.2113 - 19 (1976)

URL:

http://dx.doi.org/10.1063/1.322857

Keywords:

semiconductor-metal boundaries;solar cells;

Abstract:

A model, applicable to materials with high absorption coefficients and surface recombination velocities has been developed for the analysis of metal-semiconductor solar-cells. Calculations are presented for Au-Si and Au-GaAs cells which indicate that the highest efficiency may be obtained using n-type GaAs. Experimental results for Au/n-GaAs are found to be in good agreement with the predictions

Notes:

model;Schottky barrier solar cell analysis;Au-Si cells;Au-GaAs cells;