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MIS solar cells: a review

Publication Type:

Conference Paper

Authors:

Pulfrey, D.L.

Source:

1977 International Electron Devices Meeting, Washington, DC, USA, p.47B - (1977)

Keywords:

metal-insulator-semiconductor devices;reviews;solar cells;

Abstract:

Summary form only given, substantially as follows: The metal-thin film insulator-semiconductor (MIS) structure is currently receiving much attention in solar cell studies. Both theoretical and practical investigations indicate that this structure offers a means of overcoming the principal deficiency of Schottky barrier solar cells, namely low open-circuit photovoltage, while maintaining the attractive features that have led the metal-semiconductor junction to be considered as a possible alternative to the p-n junctions for large-area, terrestrial, solar cell applications. Theories are reviewed in this paper and are further examined, for relevance to practical solar cells, in the light of experimental data from a variety of MIS solar cells employing Si and GaAs substrates

Notes:

MIS solar cells;review;Si substrates;GaAs substrates;