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MIS solar cells with back surface fields

Publication Type:

Journal Article

Source:

Appl. Phys. Lett. (USA), Volume 35, Number 3, p.258 - 60 (1979)

URL:

http://dx.doi.org/10.1063/1.91092

Keywords:

aluminium;elemental semiconductors;metal-insulator-semiconductor devices;silicon;silicon compounds;solar cells;

Abstract:

Al-SiOx-pSi MIS solar cells have been fabricated on 10-Ω cm substrates both with and without back surface fields. The back-surface-field structure has been found to significantly enhance the open-circuit voltage of these cells, and Voc values in excess of 580 mV have been recorded at photocurrent densities of 300 Am-2. These results provide further evidence that MIS diodes can be produced in which the dark current is dominated by minority-carrier flows

Notes:

back surface fields;Al-SiOx-pSi MIS solar cells;MIS diodes;dark current;open circuit voltage;