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A minority carrier MIS solar cell

Publication Type:

Journal Article

Authors:

Pulfrey, D.L.

Source:

Solid-State Electron. (UK), Volume 20, Number 5, p.455 - 7 (1977)

Keywords:

metal-insulator-semiconductor devices;minority carriers;solar cells;

Abstract:

MIS solar cells are described which exhibit high fill-factors and open-circuit voltages and which have dark, forward bias I-V characteristics of a double exponential form. The insulator formation was achieved by a low temperature oxidation in air and an optimum insulator thickness of 12-15 Å was observed. The device properties suggest that the diodes may be operating in a recently-described, non-equilibrium minority carrier, tunnel mode

Notes:

minority carrier MIS solar cell;forward bias I-V characteristics;