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Large apparent inductance in organic Schottky diodes at low frequency

Publication Type:

Journal Article

Source:

J. Appl. Phys. (USA), Volume 99, Number 8, p.84503 - 1 (2006)

URL:

http://dx.doi.org/10.1063/1.2189208

Keywords:

aluminium;inductance;localised states;organic semiconductors;polymers;Schottky diodes;

Abstract:

A large low frequency inductance is found in a Schottky diode composed of regioregular poly(3-hexylthiophene) and aluminum. This apparent inductance is evident in response to both swept frequency sinusoidal, ramp and step voltage inputs above a threshold voltage. The constant slope of the current in response to a voltage step suggests an incredibly large inductance (a few hundred megahenry) in a device that is only 2000 μm3 in size. A number of potential mechanisms including chemical reactions, barrier modulation, and memory effects are evaluated in order to find a suitable explanation for the inductive behavior. Similarity in the dc characteristics of the organic Schottky diode and organic bistable devices that are being applied as memory suggests that the current leads the voltage due to increments in tunneling current that occur as charges are gradually stored in localized states

Notes:

large apparent inductance;organic Schottky diodes;low frequency inductance;poly(3-hexylthiophene);aluminum;chemical reactions;barrier modulation;memory effects;dc characteristics;organic bistable devices;tunneling current;localized states;Al;