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Integration of Low-Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief

Publication Type:

Journal Article

Source:

Applied Physics Express , Volume 5 (2012)

URL:

http://apex.jsap.jp/link?APEX/5/126601/

Full Text:

Through silicon via (TSV) consists of a copper (Cu) core isolated by a dielectric liner. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability. The effect on thermomechanical stress by replacing the conventional liner (silicon dioxide) with a low-κ liner (carbon-doped silicon dioxide) is studied. By micro-Raman analysis, it is observed that the biaxial stress in silicon at the immediate vicinity of Cu-TSV is relieved by 29–45% with a low-κ liner due to its smaller elastic modulus.

Faculty Member(s): 
Guangrui.Xia
Research Area(s): 
Electronics