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An improved evaluation of the DC performance of carbon nanotube field-effect transistors

Publication Type:

Journal Article

Source:

Smart Mater. Struct. (UK), Volume 15, Number 1, p.9 - 13 (2006)

URL:

http://dx.doi.org/10.1088/0964-1726/15/1/003

Keywords:

carbon nanotubes;field effect transistors;nanotechnology;Poisson equation;quantum theory;semiconductor device models;

Abstract:

A self-consistent Schrodinger-Poisson solver is used to improve upon a recent evaluation of the attainable DC performance of coaxial carbon nanotube field-effect transistors. The earlier evaluation, which was based on the predictions of a compact model, is shown to be optimistic because of the model's inadequate treatment of quantum mechanical reflection of thermionically injected carriers. This deficiency of the compact model is remedied, to a large extent, by incorporating a new, short expression for quantum mechanical reflection under phase-incoherent conditions

Notes:

carbon nanotube field-effect transistors;Schrodinger-Poisson solver;quantum-mechanical reflection;thermionically injected carriers;phase-incoherent conditions;C;