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Highly selective GaN/AlGaN/GaN UV photodiodes

Publication Type:

Conference Paper


WOCSDICE 2000. 24th Workshop on Compound Semiconductor Devices and Integrated Circuits, Aegean Sea, Greece, p.XV-9, XV-10 - (2000)


aluminium compounds;doping profiles;gallium compounds;III-V semiconductors;p-i-n photodiodes;photoconductivity;ultraviolet detectors;wide band gap semiconductors;


Al0.33Ga0.67N has a highly desirable bandgap for UV photodetection purposes, but fabricating photodiodes from this material is currently hindered by difficulties in growing high-quality doped layers. A recent solution to the doping problem has involved the fabrication of p-i-n diodes in which an undoped AlGaN layer is sandwiched between layers of doped GaN. An analysis of this structure is presented, with emphasis on how the unwanted photocurrent generated in the low-bandgap window layer can be suppressed


selective GaN/AlGaN/GaN UV photodiodes;Al0.33Ga0.67N bandgap;UV photodetection;photodiode fabrication;doped layer quality;doping;p-i-n diode fabrication;undoped AlGaN layer;doped GaN layers;photocurrent generation;low-bandgap window layer;GaN-Al0.33Ga0.67N-GaN;