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High UV/solar rejection ratios in GaN/AlGaN/GaN p-i-n photodiodes

Publication Type:

Journal Article


IEEE Trans. Electron Devices (USA), Volume 48, Number 3, p.486 - 9 (2001)



aluminium compounds;doping profiles;gallium compounds;III-V semiconductors;p-i-n photodiodes;semiconductor device models;


The solar-blind detection capability of heterostructure diodes employing an i-Al0.33Ga0.67N layer sandwiched between two doped GaN layers is investigated via simulations using MEDICI. It is shown that the introduction of quantum features, such as InGaN quantum wells and delta-doped regions of p-Al0.33Ge0.67N, can successfully suppress the current due to photogeneration in the low-bandgap GaN regions, leading to UV/solar rejection ratios of over three orders of magnitude


high UV/solar rejection ratios;p-i-n photodiodes;solar-blind detection capability;heterostructure diodes;doped GaN layers;MEDICI;simulations;InGaN quantum wells;delta-doped regions;low-bandgap GaN regions;PIN photodiodes;GaN-Al0.33Ga0.67N-GaN;InGaN;