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High-frequency capability of Schottky-barrier carbon nanotube FETs

Publication Type:

Journal Article


Diffus. Defect Data B, Solid State Phenom. (Switzerland), Volume 121-123, p.693 - 6 (2007)


carbon nanotubes;field effect transistors;nanotube devices;Schottky barriers;


The high-frequency capability of carbon nanotube field-effect transistors is investigated by simulating the small-signal performance of a device with negative-barrier Schottky contacts for the source and drain, and with a small, ungated region of nanotube between the end contacts and the edge of the wrap-around gate electrode. The overall structure is shown to exhibit resonant behaviour, which leads to a significant bias dependence of the small-signal capacitances and transconductance. This could lead to high-frequency figures of merit (fT and fmax) in the terahertz regime


high-frequency capability;Schottky-barrier;carbon nanotube;FET;negative-barrier Schottky contacts;transconductance;C;