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A fine line silicon shadow mask for inversion layer solar cells

Publication Type:

Journal Article


IEEE Electron Device Lett. (USA), Volume ED-2, Number 3, p.61 - 3 (1981)


etching;masks;metal-insulator-semiconductor devices;solar cells;


The feasibility of using silicon shadow masks to delineate fine linewidth grid patterns in MIS-inversion layer solar cells has been demonstrated. The masks have been prepared by anisotropically etching V-grooves into one surface of a silicon wafer, while simultaneously thinning the wafer by etching from the back surface. These masks have been used in a simple procedure to fabricate MISIL solar cells on 2.5 Ωcm, Czochralski silicon substrates with active area conversion efficiencies up to 15.1%


inversion layer solar cells;grid patterns;anisotropically etching;V-grooves;active area conversion efficiencies;fine line Si shadow mask;MIS devices;Czochralski substrates;