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Experiments and modeling of Si-Ge interdiffusion with partial strain relaxation in epitaxial SiGe heterostructures

Publication Type:

Journal Article

Source:

ECS Journal of Solid State Science and Technology (2014)

URL:

http://jss.ecsdl.org/cgi/content/abstract/3/10/P302

Abstract:

Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and
ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore,
the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal
anneals at higher temperatures (800◦C and 840◦C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was
negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built
to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement
with the experiment data.

Faculty Member(s): 
Guangrui.Xia
Research Area(s): 
Electronics