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Electron quasi-Fermi level-Fermi level splitting at the base-emitter junction of AlGaAs/GaAs HBT's

Publication Type:

Journal Article

Source:

IEEE Trans. Electron Devices (USA), Volume 40, Number 6, p.1183 - 5 (1993)

URL:

http://dx.doi.org/10.1109/16.214752

Keywords:

aluminium compounds;Fermi level;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;semiconductor device models;

Abstract:

The amount of electron quasi-Fermi level splitting in the emitter-base junction of AlGaAs/GaAs single- and double-heterojunction bipolar transistors is computed. The degree of splitting is found to be generally small, and less pronounced in double-heterojunction devices. However, it is argued that the effect of the splitting on the current gain may be significant

Notes:

AlGaAs-GaAs HBT;base-emitter junction;electron quasi-Fermi level splitting;double-heterojunction bipolar transistors;current gain;AlGaAs-GaAs single heterojunction bipolar transistor;