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Effects of backscattering in high-Q, large-area silicon-on-insulator ring resonators

Publication Type:

Journal Article

Source:

Optics Letters, Optical Society of America, Volume 41, Issue 7, p.4 (2016)

URL:

https://www.osapublishing.org/ol/abstract.cfm?uri=ol-41-7-1538

Abstract:

We demonstrate large-area silicon-on-insulator ring resonators
with Q values of about 2 × 10^6 at critical coupling and
3.6 × 10^6 for heavily undercoupled conditions. A model has
been developed to understand the impact of waveguide backscattering
and subcomponent imperfections on the spectral
response of our devices. The model predicts the appearance
of signals at ports that would not have them under backscattering-
free, ideal-power-splitting conditions. The predictions
of our model are shown to match the phenomena observed
in our measurements.

Full Text:

http://www.mina.ubc.ca/files/BackscatteringHighQ_ol-41-7-1538_PostPrint....

Faculty Member(s): 
Edmond.Cretu
Faculty Member(s): 
Lukas.Chrostowski
Faculty Member(s): 
Nicolas.Jaeger
Research Area(s): 
Sensors and Actuators
Research Area(s): 
Photonics and Optics