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The effect of metal work function on current conduction in metal-insulator-semiconductor tunnel junctions

Publication Type:

Journal Article

Source:

J. Appl. Phys. (USA), Volume 57, Number 2, p.373 - 6 (1985)

URL:

http://dx.doi.org/10.1063/1.334761

Keywords:

metal-insulator-semiconductor structures;tunnelling;work function;

Abstract:

The effect of metal work function on current conduction in metal-insulator-semiconductor (MIS) tunnel junctions has been investigated both experimentally and theoretically. MIS junctions on 2 and 10 Ω cm silicon substrates have been fabricated with both aluminum and magnesium contacts. It is shown that in the region of tunnel-limited current conduction, device characteristics are dependent on the metal work function. The results are in good agreement with predictions from a comprehensive analytical model. The implication of this result for MIS-inversion layer solar cells, where contact current densities are much larger than in transparent metal MIS devices, is examined

Notes:

Si-SiO2-Al;Si-SiO2-Mg;metal work function;metal-insulator-semiconductor tunnel junctions;tunnel-limited current conduction;MIS-inversion layer solar cells;