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Deoxygenation of Y-Ba-Cu-O thin films by reactive ion implantation

Publication Type:

Conference Paper


IEEE Trans. Appl. Supercond. (USA), IEEE, Volume 7, Pittsburgh, PA, USA, p.2134-7 (1997)





annealing; barium compounds; crystal structure; high-temperature superconductors; ion implantation; magnetisation; pulsed laser deposition; silicon; superconducting thin films; X-ray diffraction; yttrium compounds


Thin films of YBa2Cu3O7 (YBCO), grown by pulsed laser deposition, were implanted with Si+ ions at energies of 30,60, and 90 keV and at doses ranging from 1?1013 cm-2 to 3?1011 cm-2. X-ray diffraction techniques were used to investigate the structural dependence on implant parameters and annealing conditions, while d.c. magnetization was measured to characterize superconducting properties. By implanting only the upper portion of the film, implanted Si+ ions, near the surface, inhibit the superconductivity by removing oxygen from the bottom YBCO lattice which still retains its original crystal structure