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Coupled Dopant Diffusion and Segregation in Inhomogeneous SiGe Alloys: Experiments and Modeling

Publication Type:

Journal Article


JOURNAL OF APPLIED PHYSICS, Volume 117, p.214901-1 to 214901-7 (2015)



A coupled diffusion and segregation model was derived, where the contributions from diffusion and
segregation to dopant flux are explicitly shown. The model is generic to coupled diffusion and
segregation in inhomogeneous alloys, and provides a new approach in segregation coefficient
extraction, which is especially helpful for heterostructures with lattice mismatch strains. Experiments
of coupled P diffusion and segregation were performed with graded SiGe layers for Ge molar
fractions up to 0.18, which are relevant to pnp SiGe heterojunction bipolar transistors. The model
was shown to catch both diffusion and segregation behavior well. The diffusion-segregation model
for P in SiGe alloys was calibrated and Eseg=0.5 eV is suggested for the temperature range from
800 to 950 degree C.

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