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Compensation of temperature effects on the pull-in voltage of microstructures

Publication Type:

Journal Article


Sensors and Actuators A, Volume 115 (The 1, Number 2-3, p.351-356 (2004)


Microelectromechanical systems; Pull-in voltage; Temperature compensation


The pull-in voltage of a suspended microstructure has been investigated
for use as on-chip voltage reference in a compatible MEMS-IC process.
Pull-in is detected using capacitive displacement measurement. The
stability is affected by an initial parasitic charge build-up and
a temperature sensitivity of ?149 V/K. A burn-in procedure is required
to minimize the first effect. The temperature coefficient is compensated
for by applying additional temperature dependent electrostatic energy
to the microstructure. Devices fabricated in an epi-poly process
and designed for a nominal pull-in voltage at 5 V have a measured
value at 4.7424 V. Drift becomes negligible after 120 h of operation.
The temperature reproducibility is within the resolution of the readout
at 100 V over a temperature range between 20 and 60 $\,^{\circ}$C.