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Compact modeling of high-frequency, small-dimension bipolar transistors

Publication Type:

Conference Paper


1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140), Perth, WA, Australia, p.81 - 5 (1999)



bipolar transistors;Boltzmann equation;semiconductor device models;


Recent progress in the development of compact models for high-speed bipolar transistors with quasi-ballistic base widths (on the order of a mean-free path length) is summarized. The correctness of basing such models on the drift-diffusion equation is examined by comparing results with solutions to the Boltzmann transport equation. Useful and well-founded compact expressions are presented for important dc and ac device parameters


compact model;high-frequency bipolar transistor;high-speed device;quasi-ballistic transport;drift-diffusion equation;Boltzmann transport equation;maximum oscillation frequency;small-dimension BJT;