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Carbon nanotube transistors: an evaluation

Publication Type:

Conference Paper


Proc. SPIE - Int. Soc. Opt. Eng. (USA), Volume 5276, Number 1, Perth, SA, Australia, p.1 - 10 (2004)



carbon nanotubes;field effect transistors;nanoelectronics;semiconductor device models;work function;


A simple, non-equilibrium model is used to evaluate the likely DC performance of carbon nanotube field-effect transistors. It is shown that, by appropriate work function engineering of the source, drain and gate contacts to the device, the following desirable properties should be realizable: a sub-threshold slope close to the thermionic limit; a conductance close to the interfacial limit; an ON/OFF ratio of around 103; ON current and transconductance close to the low-quantum-capacitance limit


carbon nanotube transistors;carbon nanotube FET DC performance;FET nonequilibrium model;work function engineering;source contacts;drain contacts;gate contacts;thermionic limit sub-threshold slope;interfacial limit conductance;ON/OFF ratio;ON current;transconductance;low-quantum-capacitance limit;C;