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Bipolar effects on the signal delay time in HBTs at high currents

Publication Type:

Journal Article

Source:

IEEE Trans. Electron Devices (USA), Volume 40, Number 1, p.44 - 8 (1993)

URL:

http://dx.doi.org/10.1109/16.249422

Keywords:

carrier mobility;gallium arsenide;heterojunction bipolar transistors;III-V semiconductors;semiconductor device models;

Abstract:

The signal delay time for GaAs-based n-p-n HBTs operating at high current densities has been investigated using a phenomenological transport model. It is shown that once base pushout commences, the electronic contribution to the signal delay decreases because of the reduced intervalley scattering associated with the weakened electric field in the collector. However, more importantly for practical considerations, it is also shown that the overall signal delay time increases because of the dominant role played by the slow-moving holes in the base pushout process

Notes:

npn transistors;HBTs;signal delay time;current densities;phenomenological transport model;base pushout;intervalley scattering;weakened electric field;slow-moving holes;GaAs;