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Analytical Modeling of the Transistor Laser

Publication Type:

Journal Article

Source:

Journal of Selected Topics in Quantum Electronics, Volume 15, Issue 3, p.594-603 (2009)

URL:

http://dx.doi.org/10.1109/JSTQE.2009.2013178

Abstract:

We derive analytic expressions for the small-signal modulation response of the transistor laser operating in the common-emitter and common-base configurations. We compare the performance (current gain and small-signal modulation bandwidth) of the transistor laser in these two modes of operation. The common-base operation results in a wide-band small-signal modulation response with the same relaxation oscillation limitations as conventional lasers. The common-base configuration shows a bandwidth enhancement due to a bandwidth equalization together with a suppression of the relaxation oscillations. A bandwidth of 48 GHz is predicted for a vertical cavity laser biased at 10I$_{th}$. Finally we show that the small-signal responses of the common-base and common-emitter can be approximated by a 3rd order transfer function.

Notes:

Manuscript proof: http://www.mina.ubc.ca/files/jstqe-chrostowski-2013178-proof.pdf

Full Text:

http://www.mina.ubc.ca/files/Faraji_2009.pdf
http://www.mina.ubc.ca/files/transistor_laser_v2.pdf

Faculty Member(s): 
David.Pulfrey
Faculty Member(s): 
Lukas.Chrostowski
Research Area(s): 
Photonics and Optics