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Analysis of silicon Schottky barrier solar cells

Publication Type:

Conference Paper


11th IEEE Photovoltaic Specialists Conference, Scottsdale, AZ, USA, p.371 - 5 (1975)


Schottky-barrier diodes;semiconductor device models;solar cells;


A model is presented that allows prediction of the performance of metal/single crystal silicon diodes as photovoltaic solar energy convertors. Calculations on the gold/n-type silicon system indicate that the internal quantum efficiency of the device is high over most of the working wavelength range; that the major component of the photocurrent arises in the bulk of the semi-conductor; and that there is an optimum metal film thickness as regards conversion efficiency


silicon Schottky barrier solar cells;model;metal/single crystal silicon diodes;photovoltaic solar energy convertors;semi-conductor;performance prediction;