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An analysis of the DC and small-signal AC performance of the tunnel emitter transistor

Publication Type:

Journal Article


IEEE Trans. Electron Devices (USA), Volume 35, Number 2, p.188 - 94 (1988)



equivalent circuits;insulated gate field effect transistors;semiconductor device models;tunnelling;


A model to describe the I-V characteristics of the tunnel emitter transistor (the TETRAN) is developed. It is based on a general model for tunneling in metal thin-insulator semiconductor structures. The model is used to compute typical magnitudes for the parameters appearing in the small-signal hybrid-π equivalent circuit of this device. From these it is predicted that the cutoff frequency for realistic TETRANs based on Al/SiO2/n-Si structures is about 1 GHz. This is considerably less than the values recently predicted for a related device, the BICFET, which is similar to the TETRAN


MIS structure;DC performance;small-signal AC performance;tunnel emitter transistor;model;I-V characteristics;TETRAN;small-signal hybrid-π equivalent circuit;cutoff frequency;Al-SiO2-Si;