User login

A Systematic Study of Silicon Germanium Interdiffusion for Next Generation Semiconductor Devices

Abstract

We systematically study SiGe interdiffusion: 1) we established a unified interdiffusivity model for SiGe interdiffusion under relaxed or tensile strain over the full Ge content range from experimental data and diffusion theories. 2) We will investigate the impact of compressive strain on SiGe interdiffusion in middle to high Ge range. 3) We will study how interdiffusion depends on different dopants and doping levels.

Project Description

The objective of this project is to...

Faculty Supervisor(s)

    Guangrui.Xia   

Researchers(s)

    dongyw   

Research Area(s)