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A Systematic Study of Silicon Germanium Interdiffusion for Next Generation Semiconductor Devices


We systematically study SiGe interdiffusion: 1) we established a unified interdiffusivity model for SiGe interdiffusion under relaxed or tensile strain over the full Ge content range from experimental data and diffusion theories. 2) We will investigate the impact of compressive strain on SiGe interdiffusion in middle to high Ge range. 3) We will study how interdiffusion depends on different dopants and doping levels.

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The objective of this project is to...

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