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The demand for multifunctional and high-performance integrated circuits and systems has necessiated three-dimensional (3D) integration with through silicon via (TSV) technology. The thermomechanical stress originating from the mismatch in the coefficient of thermal expansion of Cu and silicon is a serious concern on mechanical reliability and electrical variability.

Project Description

The objective of this project is to investigate the operation temperature and diameter dependences of the stress distribution around TSVs. Both micro-Raman measurements and COMSOL simulations are used.
The impact of the operation temperature and diameter on the mobility and thus keep-out zone is also estimated.

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