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Dr. Guangrui Xia

Dr. Guangrui Xia

Telephone: +1 (604) 822-0478
Office: Frank Forward Room 013

Email:

Education

B.S., Tsinghua University, China
M.Sc., Ph.D., Massachusetts Institute of Technology, US

Research Interests

Novel semiconductor materials: strained Si, SiGe and Ge;
Process physics: dopant diffusion, interdiffusion, implant and activation;
SiGe devices for electronic and optical applications, Si based optoelectronics;
Stress characterization, simulations and modeling for lattice-mismatched material systems;
III-V and Si integration;
Raman spectroscopy

Courses

MTRL 478 Electronic Materials
MTRL 465 Engineering Design II
MTRL 592 Advanced topics in Materials Engineering -- Si VLSI technology fundamentals, practice and modeling
MTRL 466 Design Project

Dr. Guangrui Xia

Group Members:

Alumni:

    Research Projects

    P diffusion in SiGe and SiGe:CThis project is in collaboration with Texas Instruments. It is to systematically investigate P diffusion behavior in SiGe and SiGe:C.
    A Systematic Study of Silicon Germanium Interdiffusion for Next Generation Semiconductor DevicesWe systematically study SiGe interdiffusion: 1) we established a unified interdiffusivity model for SiGe interdiffusion under relaxed or tensile strain over the full Ge content range from experimental data and diffusion theories. 2) We will investigate the impact of compressive strain on SiGe interdiffusion in middle to high Ge range. 3) We will study how interdiffusion depends on different dopants and doping levels.

    Journal Publications

    (Table View)
    Submitted
    Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer, and Guangrui (Maggie) Xia, "The Effect of Thermal Nitridation-Based Defect Engineering on Phosphorus Diffusion in SiGe:C", J. of Physics D, 05/2015. Abstract Tagged XML BibTex
    2016
    Li, Xiyue, Li, Zhiqiang, Li, Simon, Chrostowski, Lukas, Xia, Guangrui Maggie, "Design considerations of biaxially tensile-strained germanium-on-silicon lasers", Semiconductor Science and Technology, vol. 31, no. 6: IOP Publishing, pp. 065015, 04/2016. Tagged XML BibTex
    Yiheng Lin, Wei Shi, Jizhong Li, Ting-Chang Chang, Ji-Soo Park, Jennifer Hydrick, Zigang Duan, Mark Greenberg, James G. Fiorenza, Lukas Chrostowski, Guangrui Xia, "Monolithic Integration of AlGaAs Distributed Bragg Reflectors on Virtual Ge Substrates via Aspect Ratio Trapping", arXiv, 01/2016. Abstract Tagged XML BibTex
    Ke, Jiaxin, Xia, Guangrui Maggie, Chrostowski, Lukas, "Structure and stress engineering for Ge-on-Si lasers using silicon nitride stressors", Group IV Photonics (GFP), 2016 IEEE 13th International Conference on: IEEE, pp. 28--29, 2016  . Tagged XML BibTex
    2015
    Feiyang Cai, Yuanwei Dong, Yew Heng Tan, Chuan Seng Tan and Guangrui (Maggie) Xia, "Enhanced Ge-Si Interdiffusion in High Phosphorus-Doped Germanium on Silicon", Semiconductor Science and Technology, 08/2015. Tagged XML BibTex
    Ye Zhu, Jiye Zhang, Hong Yu Li, Chuan Seng Tan and Guangrui (Maggie) Xia, "Study of Near-surface Stresses in Silicon around Through Silicon Vias at Elevated Temperatures by Raman spectroscopy and Simulations", IEEE Transactions on Device and Material Reliability, vol. 15, pp. 142-148, 06/2015. Abstract Tagged XML BibTex
    Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer and Guangrui (Maggie) Xia, "Coupled Dopant Diffusion and Segregation in Inhomogeneous SiGe Alloys: Experiments and Modeling", JOURNAL OF APPLIED PHYSICS, vol. 117, pp. 214901-1 to 214901-7, 05/2015. Abstract Tagged XML BibTex
    2014
    Yiheng Lin, Hiroshi Yasuda, Manfred Schiekofer, Bernhard Benna, Rick Wise and Guangrui (Maggie) Xia, "Effects of Carbon on Phosphorus Diffusion in SiGe:C and the Implications on Phosphorus Diffusion Mechanisms", JOURNAL OF APPLIED PHYSICS, vol. 116, pp. 14490, 11/2014. Abstract Tagged XML BibTex
    Yuanwei Dong, Patricia M. Mooney, Feiyang Cai, Dalaver Anjum, Naeem Ur-Rehman, Xixiang Zhang, and Guangrui (Maggie) Xia, "Experiments and modeling of Si-Ge interdiffusion with partial strain relaxation in epitaxial SiGe heterostructures", ECS Journal of Solid State Science and Technology, 07/2014. Abstract Tagged XML BibTex
    K. J. Schmidt, Y. Lin, M. Beaudoin, G. Xia, S. K. O'Leary, G. Yue, and B. Yan, "The mean crystallite size within a hydrogenated nanocrystalline silicon based photovoltaic solar cell and its role in determining the corresponding crystalline volume fraction", Canadian Journal of Physics , 02/2014. Tagged XML BibTex
    Yuanwei Dong, Winston Chern, Patricia M Mooney, Judy L Hoyt and Guangrui (Maggie) Xia, "On the role and modeling of compressive strain in Si-Ge interdiffusion for SiGe heterostructures", Semiconductor Science and Technology, vol. 29, pp. 11, 01/2014. Tagged XML BibTex
    Guangrui (Maggie) Xia, Yuanwei Dong, "Si-Ge interdiffusion, dopant diffusion and segregation in SiGe and SiGe: C based devices", Micro- and Nanoelectronics Emerging Device Challenges and Solutions: CRC Press, 2014  . Tagged XML BibTex
    2012
    Kaushik Ghosh, Jiye Zhang, Lin Zhang, Yuanwei Dong, Hongyu Li, Cher Ming Tan, Guangrui Xia, and Chuan Seng Tan, "Integration of Low-Dielectric Liner in Through Silicon Via and Thermomechanical Stress Relief", Applied Physics Express , vol. 5, 11/2012. Tagged XML BibTex
    Yuanwei Dong, Yiheng Lin, Simon Li, Steve McCoy, and Guangrui Xia, "A unified interdiffusivity model and model verification for tensile and relaxed SiGe interdiffusion over the full germanium content range", J. Appl. Phys. , vol. 111, pp. 044909, 02/2012. Abstract Tagged XML BibTex
    2011
    Chih-Hao Dai,Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Szu-Han Ho, Tien-Yu Hsieh, Wen-Hung Lo, Ching-En Chen, Jou-Miao Shih, Wan-Lin Chung, Bai-Shan Dai, Hua-Mao Chen, Guangrui Xia, Osbert Cheng, and Cheng Tung Huang, "Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors", APPLIED PHYSICS LETTERS, vol. 99, pp. 012106, 07/2011. Tagged XML BibTex
    Chih-Hao Dai, Ting-Chang Chang, An-Kuo Chu, Yuan-Jui Kuo, Fu-Yen Jian, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Wan-Lin Chung, Jou-Miao Shih, Guangrui Xia, Osbert Cheng, and Cheng-Tung Huang, "On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs", IEEE Electron Device Letters, 07/2011. Tagged XML BibTex
    Chih-Hao Dai,Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Wen-Hung Lo, Szu-Han Ho, Ching-En Chen, Jou-Miao Shih, Hua-Mao Chen, Bai-Shan Dai, Guangrui Xia, Osbert Cheng, and Cheng Tung Huang, "Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors", APPLIED PHYSICS LETTERS, vol. 98, 03/2011. Tagged XML BibTex
    2010
    Yiheng Lin, Wei Shi, Jizhong Li, Ting-Chang Chang, Ji-Soo Park, Jennifer Hydrick, Zigang Duan, Mark Greenberg, James Fiorenza, Lukas Chrostowski, Guangrui Xia, "Monolithic integration of AlGaAs distributed Bragg reflectors on virtual Ge substrates via aspect ratio trapping", International SiGe Technology and Device Meeting, 24/5/2010. Abstract Tagged XML BibTex
    Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Tsung Tsai, Wen-Hung Lo, Szu-Han Ho, Guangrui Xia, Osbert Cheng, Cheng Tung Huang, "Enhanced gate-induced foating-body effect in PD SOI MOSFET under external mechanical strain", Surface & Coatings Technology, vol. 205, 06/2010. Tagged XML BibTex
    Chih-Hao Dai, Ting-Chang Chang, Ann-Kuo Chu, Yuan-Jui Kuo, Shih-Ching Chen, Chih-Chung Tsai, Szu-Han Ho, Wen-Hung Lo, Guangrui Xia, Cheng, Osbert Cheng and Cheng Tung Huang, "On the Origin of Hole Valence Band Injection on GIFBE in PD SOI n-MOSFETs", IEEE Electron Device Letters, 06/2010. Tagged XML BibTex
    Guangrui Xia, Judy L. Hoyt, "Si-Ge Interdiffusion under Oxidizing Conditions in Epitaxial SiGe Heterostructures with High Compressive Stress", APPLIED PHYSICS LETTERS, vol. 96, pp. 122107, 03/2010. Abstract Tagged XML BibTex
    Tania Tasmin, Nicolas Rouger, Guangrui Xia, Lukas Chrostowski and Nicolas A. F. Jaeger, "Design of a 1550 nm SiGe/Si Quantum-Well Optical Modulator", Photonics North 2010, 01/06/2010. Tagged XML BibTex
    2008
    Yang, B, Takalkar, R., Ren, Z., Black, L., Dube, A., Weijtmans, J.W., Li, J., Johnson, J.B., Faltermeier, J., Madan, A., Zhu, Z., Turansky, A., Xia, G., Chakravarti, A., Pal, R., Chan, K., Reznicek, A., Adam, T.N., de Sou, "High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor", IEEE International Electron Device Meeting, 12/2008. Tagged XML BibTex
    Z. Ren, G. Pei, J. Li, F. Yang, R. Takalkar, K. Chan, G. Xia, Z. Zhu, A. Madan, T. Pinto, T.Adam, J. Miller, A. Dube, L. Black, J. W. Weijtmans, B. Yang, E. Harley, A. Chakravarti, T.Kanarsky, I. Lauer, D.-G. Park, D. Sadana, and G. Shahidi, "PDSOI nMOSFETs with Embedded Phosphorus-doped SiC Stressors for CMOS Technology", IEEE Symp. on VLSI Tech. 2008, 07/2008. Tagged XML BibTex
    2007
    Judy L Hoyt, Cait Ni Chleirigh, Leonardo Gomez, Ingvar Aberg and Guangrui Xia, "“Strained Si-Ge Heterostructure Channel Materials for Bulk and Ultra-thin Body MOSFETs", Materials Research Society Symposium Proceedings, 04/2007. Tagged XML BibTex
    Guangrui Xia, Michael Canonico, and Judy L. Hoyt, "Si–Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors", Journal of Applied Physics, vol. vol. 101, pp. 044901, 02/2007. Abstract Tagged XML BibTex
    2006
    Guangrui Xia, Michael Canonico, and Judy L. Hoyt, "Interdiffusion in strained Si/Strained SiGe epitaxial heterostructures", Semiconductor Science and Technology, vol. 22, 11/2006. Tagged XML BibTex
    Guangrui Xia, Michael Canonico, and Judy L. Hoyt, "“Interdiffusion in SiGe/Si Epitaxial Heterostructures", 2006 International SiGe Technology and Device Meeting, 05/2006. Tagged XML BibTex
    Guangrui Xia, Michael Canonico, O. O. Olubuyide and Judy L. Hoyt, "Strain dependence of Si-Ge interdiffusion in epitaxial Si/Si1-yGey/Si heterostructures on relaxed Si1-xGex substrates", Applied Physics Letters, vol. 88, 01/2006. Tagged XML BibTex
    2005
    J. Li, D. Anjum, R. Hull, G. Xia and J. L. Hoyt, "Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging", Applied Physics Letters, vol. 87, 11/2005. Tagged XML BibTex
    Dalaver Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt, and Robert Hull, "Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy", Materials Research Society Symposium Proceedings, vol. 864, 03/2005. Tagged XML BibTex
    2004
    Guangrui Xia, H. M. Nayfeh, M. L. Lee, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li,R. Hull, N. Klymko, and J. L. Hoyt, "“Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs", IEEE Transactions on Electron Devices, vol. 51, 12/2004. Tagged XML BibTex
    2002
    J. L. Hoyt, H. M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E. A. Fitzgerald, D. A.Antoniadis, "Strained silicon MOSFET technology", International Electron Devices Meeting 2002, 12/2002. Tagged XML BibTex
    F. Z. Cui, Z. J. Chen, J. Ma, G. R. Xia, Y. Zhai, "Atomistic simulation of radiation damage to carbon nanotube", Physics Letters A, vol. 295, 03/2002. Tagged XML BibTex
    2001
    M.L. Swiggers, G. Xia, J.D. Slinker, A.A. Gorodetsky, G.G. Malliaras, R.L. Headrick, Brian T.Weslowski, R.N. Shashidhar and C.S. Dulcey, "Orientation of pentacene films using surface alignment layers and its influence on thin-film transistor characteristics", Applied Physics Letters, vol. 79, 08/2001. Tagged XML BibTex
    2000
    Fuzhai Cui, Guangrui Xia, An Chen, "Atomistic simulation of radiation damage to carbon nanotubes", Progress in Natural Sciences, vol. 10, 03/2000. Tagged XML BibTex