%0 Journal Article %J Appl. Phys. Lett. (USA) %D 1988 %T Thermal stressing of bipolar transistors with metal-insulator-semiconductor heterojunction emitters %A Szeto, N %A Pulfrey, D L %A Tarr, N G %K bipolar transistors;metal-insulator-semiconductor devices; %P 1664 - 6 %U http://dx.doi.org/10.1063/1.99051 %V 52 %X Silicon bipolar junction transistors employing metal-thin insulator-semiconductor tunnel junction emitters are capable of realizing extremely high common-emitter current gains. The experimental evidence presented here indicates a possible limitation of these devices as regards their inability to withstand moderate temperature stressing %Z thermal stressing;bipolar transistors;metal-insulator-semiconductor heterojunction emitters;common-emitter current gains; %9 article