%0 Journal Article %J Appl. Phys. Lett. (USA) %D 1979 %T MIS solar cells with back surface fields %A Tarr, N G %A Pulfrey, D L %A Iles, P A %K aluminium;elemental semiconductors;metal-insulator-semiconductor devices;silicon;silicon compounds;solar cells; %P 258 - 60 %U http://dx.doi.org/10.1063/1.91092 %V 35 %X Al-SiOx-pSi MIS solar cells have been fabricated on 10-Ω cm substrates both with and without back surface fields. The back-surface-field structure has been found to significantly enhance the open-circuit voltage of these cells, and Voc values in excess of 580 mV have been recorded at photocurrent densities of 300 Am-2. These results provide further evidence that MIS diodes can be produced in which the dark current is dominated by minority-carrier flows %Z back surface fields;Al-SiOx-pSi MIS solar cells;MIS diodes;dark current;open circuit voltage; %9 article