%0 Journal Article %J J. Appl. Phys. (USA) %D 1985 %T The effect of metal work function on current conduction in metal-insulator-semiconductor tunnel junctions %A Camporese, D S %A Pulfrey, D L %K metal-insulator-semiconductor structures;tunnelling;work function; %P 373 - 6 %U http://dx.doi.org/10.1063/1.334761 %V 57 %X The effect of metal work function on current conduction in metal-insulator-semiconductor (MIS) tunnel junctions has been investigated both experimentally and theoretically. MIS junctions on 2 and 10 Ω cm silicon substrates have been fabricated with both aluminum and magnesium contacts. It is shown that in the region of tunnel-limited current conduction, device characteristics are dependent on the metal work function. The results are in good agreement with predictions from a comprehensive analytical model. The implication of this result for MIS-inversion layer solar cells, where contact current densities are much larger than in transparent metal MIS devices, is examined %Z Si-SiO2-Al;Si-SiO2-Mg;metal work function;metal-insulator-semiconductor tunnel junctions;tunnel-limited current conduction;MIS-inversion layer solar cells; %9 article