%0 Journal Article %J Appl. Phys. Lett. (USA) %D 1981 %T Induced back-surface field solar cells on p-type silicon substrates %A Tarr, N G %A Pulfrey, D L %A Iles, P A %K elemental semiconductors;metal-insulator-semiconductor devices;minority carriers;platinum;silicon;silicon compounds;solar cells; %P 83 - 5 %U http://dx.doi.org/10.1063/1.92525 %V 39 %X Recent research has shown that negative-barrier metal insulator semiconductor (MIS) contacts can exhibit the same minority-carrier reflecting properties as diffused back-surface field regions. The authors describe the use of negative-barrier platinum-MIS contacts to form the first induced back-surface field solar cells on p-type silicon substrates. Pt-SiOx-pSi back contacts have been applied both to cells with diffused front junctions and to cells with minority-carrier injecting MIS front junctions. In both cases an enhancement in open-circuit voltage comparable to that obtained with diffused back-surface fields has been observed. The negative-barrier MIS contact has also been found to increase the infrared photocurrent %Z minority-carrier reflecting;induced back-surface field solar cells;diffused front junctions;open-circuit voltage;negative-barrier MIS contact;infrared photocurrent;Pt-SiOx-p-Si back contact;minority-carrier injecting front junctions;elemental semiconductors; %9 article