%0 Journal Article %J Can. J. Phys. (Canada) %D 1985 %T The emitter-injection efficiency and emitter effective surface-recombination velocity in polysilicon emitter transistors %A Van Halen, P %A Camporese, D S %A Pulfrey, D L %K bipolar transistors;electron-hole recombination;semiconductor-insulator boundaries; %P 693 - 4 %V 63 %X Measurements of the emitter-injection efficiency and calculations of the emitter effective surface-recombination velocity are reported for polysilicon emitter transistors, i.e. bipolar transistors with a polysilicon-insulator tunnel-junction contact to the emitter. It is demonstrated that the emitter-injection efficiency increases significantly and the emitter effective surface-recombination velocity decreases by two orders of magnitude when a thin insulating layer is deliberately grown between the monocrystalline emitter surface and the polycrystalline contact %Z emitter-injection efficiency;emitter effective surface-recombination velocity;polysilicon emitter transistors;bipolar transistors;polysilicon-insulator tunnel-junction contact;thin insulating layer;monocrystalline emitter surface;polycrystalline contact; %9 article