%0 Journal Article %J IEEE Electron Device Lett. (USA) %D 1981 %T A fine line silicon shadow mask for inversion layer solar cells %A Camporese, D S %A Lester, T P %A Pulfrey, D L %K etching;masks;metal-insulator-semiconductor devices;solar cells; %P 61 - 3 %V ED-2 %X The feasibility of using silicon shadow masks to delineate fine linewidth grid patterns in MIS-inversion layer solar cells has been demonstrated. The masks have been prepared by anisotropically etching V-grooves into one surface of a silicon wafer, while simultaneously thinning the wafer by etching from the back surface. These masks have been used in a simple procedure to fabricate MISIL solar cells on 2.5 Ωcm, Czochralski silicon substrates with active area conversion efficiencies up to 15.1% %Z inversion layer solar cells;grid patterns;anisotropically etching;V-grooves;active area conversion efficiencies;fine line Si shadow mask;MIS devices;Czochralski substrates; %9 article