%0 Journal Article %J IEEE Trans. Electron Devices (USA) %D 1988 %T An analysis of the DC and small-signal AC performance of the tunnel emitter transistor %A Chu, K M %A Pulfrey, D L %K equivalent circuits;insulated gate field effect transistors;semiconductor device models;tunnelling; %P 188 - 94 %U http://dx.doi.org/10.1109/16.2439 %V 35 %X A model to describe the I-V characteristics of the tunnel emitter transistor (the TETRAN) is developed. It is based on a general model for tunneling in metal thin-insulator semiconductor structures. The model is used to compute typical magnitudes for the parameters appearing in the small-signal hybrid-π equivalent circuit of this device. From these it is predicted that the cutoff frequency for realistic TETRANs based on Al/SiO2/n-Si structures is about 1 GHz. This is considerably less than the values recently predicted for a related device, the BICFET, which is similar to the TETRAN %Z MIS structure;DC performance;small-signal AC performance;tunnel emitter transistor;model;I-V characteristics;TETRAN;small-signal hybrid-π equivalent circuit;cutoff frequency;Al-SiO2-Si; %9 article