%0 Journal Article %J IEEE Electron Device Lett. (USA) %D 1980 %T On the stability of MIS solar cells %A Kleta, J K %A Pulfrey, D L %K aluminium;metal-insulator-semiconductor structures;photoconductivity;silicon compounds;solar cells; %P 107 - 9 %V ED1 %X To achieve good photocurrent response in Al/SiOx/pSi MIS solar cells it is necessary to keep the Al barrier metal thickness to ≈50 Å. It is demonstrated that such solar cells are unstable, principally in Voc. The reduction in Voc is shown to be induced by photons of wavelength ⩽4500 Å. MIS cell stability can be improved, at the expense of efficiency, by thickening the barrier metal to 100 Å %Z stability;photocurrent response;Al/SiOx/pSi MIS solar cells; %9 article