%0 Journal Article %J IEEE Trans. Electron Devices (USA) %D 1982 %T New experimental evidence for minority-carrier reflection at negative-barrier MIS contacts %A Tarr, N G %A Pulfrey, D L %A Iles, P A %A Neugroschel, A %K electron-hole recombination;magnesium;metal-insulator-semiconductor structures;minority carriers;silicon;silicon compounds;solar cells; %P 1018 - 21 %V ED-29 %X Experimental evidence for the minority-carrier reflecting properties of the negative-barrier MIS junction is presented. First, it is shown that a negative-barrier Mg-SiOx-n-Si back contact can be used to enhance the long-wavelength photoresponse of p+-n solar cells in the same manner as a diffused n+ backsurface field. Secondly, measurements of the effective surface-recombination velocity for an Mg-SiOx-nSi contact and for a diffused n-n+ high-low junction formed on an identical substrate are reported. Both junctions gave very low values of recombination velocity, on the order of 50 cm/s %Z minority-carrier reflection;negative-barrier MIS contacts;Mg-SiOx-n-Si back contact;long-wavelength photoresponse;p+-n solar cells;effective surface-recombination velocity;n-n+ high-low junction; %9 article